ZXTP749F datasheet(4/7 Pages) DIODES

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ZXTP749F

Document Number: DS31901 Rev. 3 - 2

4 of 7

www.diodes.com

January 2013

A Product Line of

Diodes Incorporated

ZXTP749F

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-35

-60

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 7)

BVCEO

-25

-40

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.4

IE = -100µA

Collector Cutoff Current

ICBO

-50

-0.5

µA

VCB = -28V

VCB = -28V, TA = +100°C

Emitter Cutoff Current

IEBO

-50

VEB = -5.6V

Static Forward Current Transfer Ratio (Note 7)

hFE

200

130

100

320

230

180

500

IC = -100mA, VCE = -2V

IC = -1A, VCE = -2V

IC = -2A, VCE = -2V

IC = -6A, VCE = -2V

Collector-Emitter Saturation Voltage (Note 7)

VCE(sat)

-85

-229

-150

-350

IC = -1A, IB = -100mA

IC = -3A, IB = -300mA

Base-Emitter Turn-On Voltage (Note 7)

VBE(on)

-786

-850

IC = -1A, VCE = -2V

Base-Emitter Saturation Voltage (Note 7)

VBE(sat)

-895

-1000

IC = -1A, IB = -100mA

Notes:

7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

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