STP652F datasheet(1/7 Pages) SAMHOP

Part #	STP652F

Description	Super high dense cell design for extremely low RDS(ON).

PDF	7 Pages

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 7 page

S mHop Microelectronics C orp.

a

Symbol

VDS

VGS

IDM

EAS

3.25

62.5

W

A

PD

°C

46

-55 to 175

ID

Units

Parameter

60

29

90

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

110

mJ

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

60V

29A

22 @ VGS=10V

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220F package.

S

G

D

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

a

TC=25°C

-Pulsed

b

A

Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

Ver 1.1

www.samhop.com.tw

Oct,27,2010

1

Details are subject to change without notice.

A

24

TC=70°C

32

W

STP652F

Gre

rr

P

Pr

P

P o

rr

GDS

STF SERIES

TO-220F

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STP652F Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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