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STP652F Datasheet(PDF) 4 Page - SamHop Microelectronics Corp.

Part # STP652F
Description  Super high dense cell design for extremely low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP652F Datasheet(HTML) 4 Page - SamHop Microelectronics Corp.

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STP652F
Ver 1.1
www.samhop.com.tw
Oct,27,2010
4
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
400
100
10
1
0.1
1
10
60
DC
R
DS
(O
N)
Lim
it
V GS =10V
S ingle P uls e
T A=25 C
10m
s
1m
s
10
0us
10u
s
2400
2000
1600
1200
800
400
0
10
15
20
25
30
0
5
60
50
40
30
20
10
0
24
6
8
10
0
ID=14.5A
25 C
75 C
125 C
10
1
60
0
0.25
0.50
0.75
1.00
1.25
25 C
125 C
75 C
10
8
6
4
2
0
04
8
12
16 20
24
28
32
V DS =30V
ID=14.5A
110
100
1
10
100
300
VDS=30V,ID=1A
VGS=10V
TD(on)
Tf
Tr
TD(off )
Cis s
Cos s
Crs s



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