75N75

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-097.F



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

75

V

Gate-Source Voltage

±20

V

Continuous Drain Current

80

A

Pulsed Drain Current (Note 2)

320

A

Single Pulsed Avalanche Energy (Note 3)

700

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

12

V/ns

Power Dissipation

TO-220/TO-263

300

W

TO-220F/ TO-220F1

48

W

TO-220F2

50

W

Junction Temperature

+175

°C

Storage Temperature

-55 ~ +175

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

TO-220/TO-263

0.5

°C/W

TO-220F/ TO-220F1

2.6

°C/W

TO-220F2

2.5

°C/W