70N06L-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

75N75

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-097.F



ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0 V, ID = 250 µA

Drain-Source Leakage Current

IDSS

VDS = 75 V, VGS = 0 V

µA

Gate-Source Leakage Current

Forward

IGSS

VGS = 20V, VDS = 0 V

100

Reverse

VGS = -20V, VDS = 0 V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250 µA

2.0

3.0

4.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10 V, ID = 40 A

9.5

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS = 0 V, VDS = 25 V

f = 1MHz

3700

Output Capacitance

COSS

773

Reverse Transfer Capacitance

CRSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD(ON)

VDD = 37.5V, ID =45A,

VGS=10V, RG=4.7Ω

133

150

Turn-On Rise Time

208

232

Turn-Off Delay Time

tD(OFF)

354

370

Turn-Off Fall Time

246

260

Total Gate Charge

VDS = 60V, VGS = 10 V

ID = 80A

430

440

Gate-Source Charge

QGS

Gate-Drain Charge

QGD

102

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage (Note 2)

VSD

VGS = 0 V, IS = 80A

1.5

Continuous Source Current

Pulsed Source Current (Note 1)

ISM

320

Reverse Recovery Time

tRR

IS = 80A, VDD = 25 V

dIF / dt = 100 A/µs

132

Reverse Recovery Charge

QRR

660

µC

Note: 1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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