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MMDF7N02Z Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF7N02Z Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 12 page ![]() MMDF7N02Z http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Max Unit Drain−to−Source Voltage VDSS 20 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 20 Vdc Gate−to−Source Voltage − Continuous VGS ±12 Vdc Drain Current Continuous @ TA = 25°C (Note 1.) Continuous @ TA = 70°C (Note 1.) Pulsed Drain Current (Note 3.) ID ID IDM 7.0 4.6 35 Adc Total Power Dissipation @ TA = 25°C (Note 1.) Linear Derating Factor @ TA = 25°C (Note 1.) PD 2.0 16 Watts mW/ °C Total Power Dissipation @ TA = 25°C (Note 2.) Linear Derating Factor @ TA = 25°C (Note 2.) PD 1.39 11.11 Watts mW/ °C Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C THERMAL RESISTANCE Parameter Symbol Typ Max Unit Junction−to−Ambient (Note 1.) Junction−to−Ambient (Note 2.) RqJA − − 62.5 90 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Notes 4. & 5.) (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) V(BR)DSS 20 − − 15 − − Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS − − − − 1.0 10 µAdc Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc) IGSS − − 3.0 µAdc ON CHARACTERISTICS (Note 4.) Gate Threshold Voltage (Cpk ≥ 2.0) (Notes 4. & 5.) (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) 0.5 − 0.7 2.5 1.0 − Vdc mV/ °C Static Drain−to−Source On−Resistance (Cpk ≥ 2.0) (Notes 4. & 5.) (VGS = 4.5 Vdc, ID = 7.0 Adc) (VGS = 2.5 Vdc, ID = 3.5 Adc) RDS(on) − − 23 30 27 35 m Ω Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) (Note 4.) gFS 5.0 11 − Mhos 1. When mounted on 1 ″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds). 2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State). 3. Repetitive rating; pulse width limited by maximum junction temperature. 4. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 5. Reflects typical values. Cpk = Max limit − Typ 3 x SIGMA |
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