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MMDF7N02Z Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMDF7N02Z
Description  N?묬hannel Power MOSFET
PDF  12 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF7N02Z Datasheet(HTML) 2 Page - ON Semiconductor

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MMDF7N02Z
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
±12
Vdc
Drain Current
Continuous @ TA = 25°C (Note 1.)
Continuous @ TA = 70°C (Note 1.)
Pulsed Drain Current (Note 3.)
ID
ID
IDM
7.0
4.6
35
Adc
Total Power Dissipation @ TA = 25°C (Note 1.)
Linear Derating Factor @ TA = 25°C (Note 1.)
PD
2.0
16
Watts
mW/
°C
Total Power Dissipation @ TA = 25°C (Note 2.)
Linear Derating Factor @ TA = 25°C (Note 2.)
PD
1.39
11.11
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
THERMAL RESISTANCE
Parameter
Symbol
Typ
Max
Unit
Junction−to−Ambient (Note 1.)
Junction−to−Ambient (Note 2.)
RqJA
62.5
90
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
15
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
µAdc
Gate−Body Leakage Current (VGS = ±12 Vdc, VDS = 0 Vdc)
IGSS
3.0
µAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
0.5
0.7
2.5
1.0
Vdc
mV/
°C
Static Drain−to−Source On−Resistance
(Cpk
≥ 2.0) (Notes 4. & 5.)
(VGS = 4.5 Vdc, ID = 7.0 Adc)
(VGS = 2.5 Vdc, ID = 3.5 Adc)
RDS(on)
23
30
27
35
m
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) (Note 4.)
gFS
5.0
11
Mhos
1. When mounted on 1
″ square FR4 or G−10 board (VGS = 10 V, @ 10 seconds).
2. When mounted on minimum recommended FR4 or G−10 board (VGS = 10 V, @ Steady State).
3. Repetitive rating; pulse width limited by maximum junction temperature.
4. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
5. Reflects typical values.
Cpk =
Max limit − Typ
3 x SIGMA



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