MMDF7N02Z datasheet(3/12 Pages) ONSEMI

3 / 12 page

MMDF7N02Z

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Input Capacitance

16 Vd

0Vd

Ciss

−

450

630

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

−

350

490

Transfer Capacitance

f = 1.0 MHz)

Crss

−

110

155

SWITCHING CHARACTERISTICS (Note 7.)

Turn−On Delay Time

td(on)

−

Rise Time

(VDD = 10 Vdc, ID = 1.0 Adc,

VGS =45Vdc

−

230

460

Turn−Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω) (Note 6.)

td(off)

−

725

1450

Fall Time

6.0

Ω) (Note 6.)

−

780

1560

Gate Charge

SFi

−

See Figure 8

(VDS = 12 Vdc, ID = 5.0 Adc,

−

1.4

−

(VDS

12 Vdc, ID

5.0 Adc,

VGS = 4.5 Vdc) (Note 6.)

−

6.7

−

6.5

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 7.0 Adc, VGS = 0 Vdc) (Note 6.)

(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

0.90

0.84

1.1

−

Vdc

Reverse Recovery Time

trr

−

780

−

(IS = 7.0 Adc, VGS = 0 Vdc,

−

190

−

(IS

7.0 Adc, VGS

0 Vdc,

dIS/dt = 100 A/µs) (Note 6.)

−

590

−

Reverse Recovery Stored Charge

QRR

−

5.7

−

µC

6. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

7. Switching characteristics are independent of operating junction temperatures.

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