STL16N65M2 datasheet(3/16 Pages) STMICROELECTRONICS

Part #	STL16N65M2

Description	N-channel 650 V, 0.325 ??typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT™5x6 HV package

PDF	16 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

3 / 16 page

DocID027128 Rev 1

3/16

STL16N65M2

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

7.5

Drain current (continuous) at TC = 100 °C

4.7

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (2)

ISD ≤ 7.5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V.

Peak diode recovery voltage slope

V/ns

dv/dt (3)

VDS ≤ 520 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

2.23

°C/W

Rthj-pcb

Thermal resistance junction-pcb max(1)

When mounted on 1 inch² FR-4, 2 Oz copper board

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

1.5

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID= IAR; VDD=50)

115

STL16N65M2 Datasheet(PDF) 3 Page - STMicroelectronics

STL16N65M2 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL