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STB9NK80Z Datasheet(PDF) 1 Page - STMicroelectronics |
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STB9NK80Z Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. July 2013 DocID024491 Rev 2 1/15 15 STB9NK80Z Automotive-grade N-channel 800 V, 1.5 Ω typ., 5.2 A Zener-protected SuperMESH™ Power MOSFETs in D 2 PAK package Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive applications and AEC-Q101 qualified • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized • Zener-protected • Very low intrinsic capacitances Applications • Switching application Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. D2PAK 1 3 TAB AM01476v1 Type VDS (@Tjmax) RDS(on) max. ID STB9NK80Z 800V 1.8 Ω 5.2A Table 1. Device summary Order codes Marking Package Packaging STB9NK80Z B9NK80Z D²PAK Tape and reel www.st.com |
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