STB9NK80Z datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

DocID024491 Rev 2

3/15

STB9NK80Z

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain-source voltage

800

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

5.2

Drain current (continuous) at T

= 100 °C

3.3

(1)

Pulse width limited by junction temperature.

Drain current (pulsed)

20.8

TOT

Total dissipation at T

= 25°C

125

Derating factor

W/°C

ESD

Gate-source human body model (C = 100 pF, R = 1.5 k

Ω)4

dv/dt

(2)

≤ 5.2 A, di/dt ≤ 200 A/μs, V

≤ V

(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

stg

Max operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

thj-case

Thermal resistance junction-case max

°C/W

thj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

5.2

Single pulse avalanche energy

(starting T

= 25 °C, I

= I

, V

= 50 V)

210

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