CSD19534KCS datasheet(3/12 Pages) TI1

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CSD19534KCS

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SLPS530 – JANUARY 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

100

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 80 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

2.4

2.8

3.4

VGS = 6 V, ID = 30 A

16.3

20.0

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V, ID = 30 A

13.7

16.5

Ω

gƒs

Transconductance

VDS = 10 V, ID = 30 A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

1290

1670

Coss

Output Capacitance

VGS = 0 V, VDS = 50 V, ƒ = 1 MHz

257

334

Crss

Reverse Transfer Capacitance

5.7

7.4

Series Gate Resistance

1.1

2.2

Ω

Gate Charge Total (10 V)

17.1

22.2

Qgd

Gate Charge Gate-to-Drain

3.2

VDS = 50 V, ID = 30 A

Qgs

Gate Charge Gate-to-Source

5.1

Qg(th)

Gate Charge at Vth

3.3

Qoss

Output Charge

VDS = 50 V, VGS = 0 V

td(on)

Turn On Delay Time

Rise Time

VDS = 50 V, VGS = 10 V,

IDS = 30 A, RG = 0 Ω

td(off)

Turn Off Delay Time

tƒ

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 30 A, VGS = 0 V

0.9

1.1

Qrr

Reverse Recovery Charge

195

VDS= 50 V, IF = 30 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

1.3

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

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