CSD19534KCS datasheet(5/12 Pages) TI1

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VSD - Source-to-Drain Voltage (V)

0.2

0.4

0.6

0.8

1.2

0.0001

0.001

0.01

0.1

100

D009

TC = 25°C

TC = 125°C

TC - Case Temperature (°C)

-75

-50

-25

100 125 150 175 200

0.4

0.7

1.3

1.6

1.9

2.2

2.5

D008

VGS = 6 V

VGS = 10 V

TC - Case Temperature (°C)

-75

-50

-25

100 125 150 175 200

1.4

1.6

1.8

2.2

2.4

2.6

2.8

3.2

3.4

D006

VGS - Gate-to-Source Voltage (V)

D007

TC = 25°C, I D = 30 A

TC = 125°C, I D = 30 A

Qg - Gate Charge (nC)

D004

VDS - Drain-to-Source Voltage (V)

100

1000

10000

D005

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

CSD19534KCS

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SLPS530 – JANUARY 2015

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 30 A

VDS = 50 V

Figure 5. Capacitance

Figure 4. Gate Charge

ID = 250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

ID = 30 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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