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MCP1804 Datasheet(PDF) 21 Page - Microchip Technology |
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MCP1804 Datasheet(HTML) 21 Page - Microchip Technology |
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21 / 36 page ![]() 2009-2013 Microchip Technology Inc. DS20002200D-page 21 MCP1804 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 Typical Application The MCP1804 is most commonly used as a voltage regulator. Its low quiescent current and wide input voltage make it ideal for Li-Ion and 12V battery- powered applications. FIGURE 6-1: Typical Application Circuit. 6.1.1 APPLICATION INPUT CONDITIONS 6.2 Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1804 is a function of input voltage, output voltage and output current. The power dissipation resulting from the quiescent current draw is so low it is insignificant (50.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: The maximum continuous operating temperature specified for the MCP1804 is +85°C. To estimate the internal junction temperature of the MCP1804, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R JA). The thermal resistance from junction to ambient for the SOT-23 pin package is estimated at 256°C/W. EQUATION 6-2: The maximum power dissipation capability for a package can be calculated given the junction- to-ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: EQUATION 6-4: EQUATION 6-5: Package Type = SOT-23 Input Voltage Range = 3.8V to 4.2V VIN maximum = 4.6V VOUT typical = 1.8V IOUT = 50 mA maximum GND VOUT VIN CIN 1µF COUT 1µF Ceramic VOUT VIN 4.2V 1.8V IOUT 50 mA Ceramic SHDN NC PLDO VIN MAX VOUT MIN – I OUT = Where: PLDO = Internal power dissipation of the LDO Pass device VIN(MAX) = Maximum input voltage VOUT(MIN) = Minimum output voltage of the LDO TJMAX PTOTAL RJA TAMAX + = Where: TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total power dissipation of the device R JA = Thermal resistance from junction to ambient TA(MAX) = Maximum ambient temperature PDMAX TJMAX TAMAX – R JA --------------------------------------------------- = Where: PD(MAX) = Maximum power dissipation of the device TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature R JA = Thermal resistance from junction to ambient TJRISE PDMAX R JA = Where: TJ(RISE) = Rise in the device’s junction temperature over the ambient temperature PD(MAX) = Maximum power dissipation of the device R JA = Thermal resistance from junction to ambient TJ TJRISE TA + = Where: TJ = Junction Temperature TJ(RISE) = Rise in the device’s junction temperature over the ambient temperature TA = Ambient temperature |
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