ND2012L datasheet(3/4 Pages) TEMIC

3 / 4 page

ND2012L/2020L

Siliconix

S-52426—Rev. C, 14-Apr-97

Typical Characteristics (25

_C Unless Otherwise Noted)

Output Characteristics (ND2020)

On-Resistance and Drain Current

vs. Gate-Source Cutoff Voltage

On-Resistance vs. DrainCurrent

Transfer Characteristics (ND2012)

VGS – Gate-Source Voltage (V)

VDS – Drain-to-Source Voltage (V)

Output Characteristics (ND2012)

Transfer Characteristics (ND2020)

VGS(off) – Gate-Source Cutoff Voltage (V)

ID – Drain Current (mA)

100

0.4

0.8

1.2

1.6

0 V

–1 V

–1.5 V

–2 V

–0.5 V

–2.5 V

500

400

300

–4.5

–3.5

0.5

200

100

–2.5

–1.5

–0.5

125

TC = –55_C

100

0.4

0.8

1.2

1.6

0.2 V

–0.2 V

0 V

–0.4 V

–0.6 V

–0.8 V

–1 V

–1.4 V

–1.2 V

200

160

120

–4.5

–3.5

–2.5

–1.5

–0.5

0.5

–55

TC = 125_C

0–1

–5

–2

–3

–4

1000

800

600

400

200

rDS(on)

IDSS

rDS @ ID = 20 mA, VGS = 0 V

IDSS @ VDS = 7.5 V, VGS = 0 V

100

1 K

ND2020

ND2012

VGS = 0 V

VDS = 10 V

VGS = 2 V

VGS = 5 V

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