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ND2012L Datasheet(PDF) 4 Page - TEMIC Semiconductors |
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ND2012L Datasheet(HTML) 4 Page - TEMIC Semiconductors |
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4 / 4 page ![]() ND2012L/2020L 4 Siliconix S-52426—Rev. C, 14-Apr-97 Typical Characteristics (25 _C Unless Otherwise Noted) (Cont’d) 100 10 1 1 100 10 VDD = 25 V VGS = 0 to –5 V RG = 25 W 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 K Forward Transconductance and Output Conductance vs. Drain Current Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Capacitance Load Condition Effects on Switching t1 – Square Wave Pulse Duration (sec) ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) td(on) td(off) tr tf 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156 _C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 Notes: PDM t2 ID – Drain Current (A) TJ – Junction Temperature (_C) Normalized On-Resistance vs. Junction Temperature 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 VGS = 0 V ID = 20 mA 700 300 100 500 400 200 600 350 150 50 1 10 100 1 K 250 200 100 300 0 0 VDS = 7.5 V Pulse Test 80 ms, 1% Duty Cycle 120 100 80 0 60 40 20 010 50 20 30 40 C iss C rss Coss gfs gos VGS = –5 V f = 1 MHz |
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