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STB85NS04Z Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB85NS04Z
Description  Low capacitance and gate charge
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB85NS04Z Datasheet(HTML) 1 Page - STMicroelectronics

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September 2006
Rev 1
1/15
15
STB85NS04Z
STB85NS04Z-1
N-channel 11m
Ω - 80A - D2PAK - I2PAK
SAFeFET™ Power MOSFET
General features
■ 100% avalanche tested
■ Low capacitance and gate charge
■ 175°C maximum junction temperature
Description
This fully clamped Power MOSFET is produced
by using the latest advanced Company’s Mesh
Overlay™ process which is based on a novel strip
layout. The inherent benefits of the new
technology coupled with the extra clamping
capabilities make this product particularly suitble
for the harshest operation conditions such as
those encountered inthe automotive environment.
Any other application requiring extra ruggedness
is also recommended.
Applications
■ Switching application
– Automotive
Internal schematic diagram
Type
VDSS
RDS(on)
ID
STB85NS04Z
Clamped
< 0.015
Ω 80A(1)
1.
Current limited by wire bonding
STB85NS04Z-1
Clamped
< 0.015
Ω 80A(1)
1
2
3
1
3
I²PAK
D²PAK
www.st.com
Order codes
Part number
Marking
Package
Packaging
STB85NS04ZT4
B85NS04Z
D²PAK
Tape &reel
STB85NS04Z-1
B85NS04Z-1
I²PAK
Tube
Obsolete
Product(s)
- Obsolete
Product(s)
Obsolete
Product(s)
- Obsolete
Product(s)
Obsolete
Product(s)
- Obsolete
Product(s)


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