STB85NS04Z datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

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STB85NS04Z - STB85NS04Z-1

Electrical ratings

3/15

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS=0)

33 (1)

Voltage is limited by zener diodes

VGS

Gate-source voltage

± 18

Drain current (continuous) at TC = 25°C

80 (2)

Current limited by wire bonding

Drain current (continuous) at TC = 100°C

IDG

Drain gate current (continuous)

± 50

IGS

Gate source current (continuous)

± 50

IDM

(3)

Pulse width limited by safe operating area

Drain current (pulsed)

320

Derating factor

1.43

W/°C

PTOT

Total dissipation at TC = 25°C

215

VESD(G-S)

Gate-source ESD (HBM-C=100pF, R=1.5k

Ω)2

VESD(G-D)

Gate-drain ESD (HBM-C=100pF, R=1.5k

Ω)4

VESD(D-S)

Drain-source ESD (HBM-C=100pF, R=1.5k

Ω)4

Operating junction temperature

-55 to 175

°C

Tstg

Storage temperature

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

D²PAK

I²PAK

Rthj-case

Thermal resistance junction-case max

0.7

°C/W

Rthj-pcb (1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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