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AS4C64M8D2 Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation

Part # AS4C64M8D2
Description  Fully synchronous operation
PDF  59 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M8D2 Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation

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AS4C64M8D2
Confidential
9
Rev. 1.0
Feb. /2014
 Mode Register Set(MRS)
The mode register stores the data for controlling the various operating modes of DDR2 SDRAM. It controls CAS
latency, burst length, burst sequence, test mode, DLL reset, WR, and various vendor specific options to make
DDR2 SDRAM useful for various applications. The default value of the mode register is not defined, therefore the
mode register must be programmed during initialization for proper operation. The mode register is written by
asserting LOW on CS#, RAS#, CAS#, WE#, BA0 and BA1, while controlling the state of address pins A0 - A13.
The DDR2 SDRAM should be in all bank precharge state with CKE already HIGH prior to writing into the mode
register.The mode register set command cycle time (tMRD) is required to complete the write operation to the mode
register. The mode register contents can be changed using the same command and clock cycle requirements
during normal operation as long as all bank are in the precharge state.The mode register is divided into various
fields depending on functionality.
- Burst Length Field (A2, A1, A0)
This field specifies the data length of column access and selects the Burst Length.
- Addressing Mode Select Field (A3)
The Addressing Mode can be Interleave Mode or Sequential Mode. Both Sequential Mode and Interleave Mode
support burst length of 4 and 8.
- CAS Latency Field (A6, A5, A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first read data. The
minimum whole value of CAS Latency depends on the frequency of CK. The minimum whole value satisfying the
following formula must be programmed into this field. (tCAC(min) ≦ CAS Latency X tCK)
- Test Mode Field (A7); DLL Reset Mode Field (A8)
These two bits must be programmed to "00" in normal operation.
- Write recovery Field (A11, A10, A9)
The WR register is used by the DDR2 SDRAM during WRITE with auto precharge operation. The WR register is
used by the DDR2 SDRAM during WRITE with auto precharge operation.
- Active Power down Field (A12)
PD mode enables the user to determine the active power-down mode, which determines performance versus
power savings. does not apply to precharge PD mode.
- (BA0-BA1): Bank addresses to define MRS selection.
Table 5. Mode Register Bitmap
BA1 BA0 A13 A12 A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0 Address Field
0
0
0
*2
PD
WR
DLL TM
CAS Latency
BT
Burst Length
Mode Register
A8
DLL Reset
A7
Mode
A3
Burst Type
A2 A1 A0 BL
0
No
0
Normal
0
Sequential
0
1
0
4
1
Yes
1
Test
1
Interleave
0
1
1
8
NOTE 1: For DDR2-667/800, WR min is determined by tCK (avg) max and WR max is determined by tCK(avg) min. WR [cycles]
= RU {tWR[ns]/tCK(avg)[ns]}, where RU stands for round up. The mode register must be programmed to this
value.This is also used with tRP to determine tDAL.
NOTE 2: A13 are reserved for future use and must be set to 0 when programming the MR.
A12 Active power down exit time
Write recovery for autoprecharge
*1
0
Fast exit (use tXARD)
A11
A10
A9
WR(cycles)
A6
A5
A4
CAS Latency
1
Slow exit (use tXARDS)
0
0
0
Reserved
0
0
0
Reserved
0
0
1
2
0
0
1
Reserved
BA1
BA0
MRS Mode
0
1
0
3
0
1
0
Reserved
0
0
MR
0
1
1
4
0
1
1
3
0
1
EMR(1)
1
0
0
5
1
0
0
4
1
0
EMR(2)
1
0
1
6
1
0
1
5
1
1
EMR(3)
1
1
0
Reserved
1
1
0
6
1
1
1
Reserved
1
1
1
Reserved



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