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AS7C316096C Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part # AS7C316096C
Description  Fully static operation
PDF  12 Pages
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C316096C Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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AS7C316096C
Rev. 1.0
2048K X 8 BIT HIGH SPEED CMOS SRAM
Confidential
7
Rev 1.0 / May 2014
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
(4)
TOW
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.



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