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MMBD4448 Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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MMBD4448 Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Any changing of specification will not be informed individual MMBD4448 Surface Mount Switching Diode A MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 250 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 °C PD 350 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C DEVICE MARKING MMBD4448 = KA3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 2.5mAdc) V(BR) 75 — Vdc Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR — — 25 5.0 nAdc mAdc Diode Capacitance (VR = 0, f = 1.0 MHz) CT — 4.0 pF Forward Voltage (IF = 10 mAdc) VF — 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr — 4.0 ns 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. FEATURES · Fast Switching Speed · Surface Mount Package Ideally Suited for Automatic Insertion · For General Purpose Switching Applications · High Conductance 1 ANODE 3 CATHODE K J C H L B S G V 3 1 2 D Top View Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 1 2 3 http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2002 Rev. A Page 1 of 2 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free |
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