Elektronische Bauelemente

SCG4153S

Ω

Ω

Ω

Channel Enhancement MOSFET

23-Jan-2017 Rev.A

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

20

-

-

V

Zero Gate Voltage Drain Current

-

-

100

nA

Gate-Body Leakage Current

-

-

±1

µA

Gate Threshold Voltage

2

0.45

-

1.1

V

-

-

570

-

-

620

-

-

700

Drain-Source On-Resistance

2

-

-

9500

m

Forward Transfer conductance

2

-

0.5

-

S

Dynamic Characteristics

Input Capacitance

-

110

-

Output Capacitance

-

16

-

Reverse Transfer Capacitance

-

12

-

pF

f=1MHz

Total Gate Charge

-

1.82

-

Gate-Source Charge

-

0.3

-

Gate-Drain Charge

-

0.42

-

nC

Switching Characteristics

3

Turn-On Delay Time

-

3.7

-

Rise Time

-

4.4

-

Turn-Off Delay Time

-

25

-

Fall Time

-

7.6

-

nS

Drain-Source Diode Characteristics

Body Diode Voltage

-

-

1.1

V

Notes:

1.

Surface mounted on FR4 board using 1 in sq pad size.

2.

Pulse Test : Pulse Width=300µs, Duty Cycle=2%.

3.

Switching characteristics are independent of operating junction temperatures.

.