AFT26P100-4WS datasheet(2/16 Pages) NXP

2 / 16 page

RF Device Data

Freescale Semiconductor, Inc.

AFT26P100--4WSR3 AFT26P100--4WGSR3

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

--65 to +150

C

Case Operating Temperature Range

--40 to +125

C

Operating Junction Temperature Range (1,2)

--40 to +225

C

CW Operation @ TC =25C

Derate above 25C

195

2.60

W/C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value (2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 77C, 22 W CW, 28 Vdc, VGSA =0.7 Vdc,

IDQB = 200 mA, 2590 MHz

RJC

0.60

C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

III

Table 4. Electrical Characteristics (TA =25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics (4)

Zero Gate Voltage Drain Leakage Current

(VDS =65 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Zero Gate Voltage Drain Leakage Current

(VDS =28 Vdc, VGS =0 Vdc)

IDSS

—

Adc

Gate--Source Leakage Current

(VGS =5 Vdc, VDS =0 Vdc)

IGSS

—

Adc

On Characteristics

Gate Threshold Voltage (5)

(VDS =10 Vdc, ID = 140 Adc)

VGS(th)

0.8

1.2

1.6

Vdc

Gate Quiescent Voltage

(VDD =28 Vdc, IDB = 200 mA, Measured in Functional Test)

VGSB(Q)

1.3

1.8

2.1

Vdc

Drain--Source On--Voltage (4)

(VGS =6 Vdc, ID =1.4 Adc)

VDS(on)

0.1

0.15

0.3

Vdc

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes -- AN1955.

4. Measurement made with both sides of the transistor tied together.

5. Each side of device measured separately.

(continued)

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