AFT26P100-4WS datasheet(8/16 Pages) NXP

8 / 16 page

RF Device Data

Freescale Semiconductor, Inc.

AFT26P100--4WSR3 AFT26P100--4WGSR3

VDD =28 Vdc,IDQA = 189 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Output Power

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

2500

4.37 -- j13.8

5.84 + j14.7

3.19 -- j9.50

16.3

48.7

53.8

--13

2600

7.22 -- j15.5

9.54 + j16.6

3.35 -- j9.78

16.7

48.6

54.9

--12

2690

13.2 -- j15.4

15.2 + j17.0

3.40 -- j10.5

16.5

48.8

55.8

--11

(MHz)

Zsource

()

Zin

()

Max Output Power

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

2500

4.37 -- j13.8

5.71 + j15.8

3.19 -- j9.84

14.2

49.4

54.9

--20

2600

7.22 -- j15.5

10.4 + j18.5

3.35 -- j10.4

14.4

49.4

54.8

--18

2690

13.2 -- j15.4

17.9 + j18.8

3.40 -- j10.9

14.4

49.5

56.1

--16

(1) Load impedance for optimum P1dB power.

(2) Load impedance for optimum P3dB power.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Figure 9. Single Side Load Pull Performance — Maximum Power Tuning

VDD =28 Vdc,IDQA = 189 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P1dB

Zload (1)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

2500

4.37 -- j13.8

5.16 + j14.8

6.14 -- j6.97

18.5

47.1

62.9

--20

2600

7.22 -- j15.5

8.57 + j17.1

5.28 -- j7.45

18.6

47.4

62.1

--18

2690

13.2 -- j15.4

13.9 + j18.4

4.69 -- j7.79

18.4

47.5

63.7

--17

(MHz)

Zsource

()

Zin

()

Max Drain Efficiency

P3dB

Zload (2)

()

Gain (dB)

(dBm)

(W)

D

(%)

AM/PM

()

2500

4.37 -- j13.8

5.04 + j15.8

5.63 -- j7.56

16.2

48.1

62.6

--28

2600

7.22 -- j15.5

9.18 + j18.8

4.99 -- j7.91

16.3

48.3

61.9

--25

2690

13.2 -- j15.4

16.3 + j20.4

4.60 -- j8.25

16.2

48.4

63.5

--24

(1) Load impedance for optimum P1dB efficiency.

(2) Load impedance for optimum P3dB efficiency.

Zsource = Measured impedance presented to the input of the device at the package reference plane.

Zin

= Impedance as measured from gate contact to ground.

Zload = Measured impedance presented to the output of the device at the package reference plane.

Figure 10. Single Side Load Pull Performance — Maximum Drain Efficiency Tuning

Input Load Pull

Tuner and Test

Circuit

Device

Under

Test

Zsource Zin

Zload

Output Load Pull

Tuner and Test

Circuit

AFT26P100-4WS Datasheet(PDF) 8 Page - NXP Semiconductors

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