TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum peak gate power

8.0

Maximum average gate power

2.0

W

Maximum peak positive gate current

1.5

A

Maximum peak negative gate voltage

10

V

90

60

DC gate current required to trigger

Maximum required gate trigger

current/voltage are the lowest

value which will trigger all units

6 V anode to cathode applied

35

mA

3.0

1.5

DC gate voltage required to trigger

1.0

V

DC gate current not to trigger

2.0

mA

DC gate voltage not to trigger

0.2

V

SEMICONDUCTOR

RoHS

RoHS

T = T maximum

J

J

T = T maximum

J

J

T = T maximum

J

J

T = -65°C

J

T = 25°C

J

T = 125°C

J

T = -65°C

J

T = 25°C

J

T =125°C

J

T = T maximum, V

= Rated value

J

J

DRM

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated V

anode to

DRM

cathode applied

V

= Rated value

DRM

T = T maximum,

J

J

THERMAL AND MECHANICAL SPECIFCATIONS

PARAMETER

SYMBOL

UNITS

TEST CONDITIONS

VALUES

Maximum junction operating

and storage temperature range

- 65 to125

ºC

0.35

K/W

Maximum thermal resistace,

junction to case

Maximum thermal resistance

case to heatsink

0.75

(30)

(20)

11.5

0.41

(lbf · in)

N · m

Allowable mounting torque

Approximate weight

Case style

TO-208AA (TO-48)

(lbf · in)

N · m

g

oz.

Not-lubricated threads

Lubricated threads

Mounting surface, smooth, flat and greased

DC operation

See dimensions - link at the end of datasheet

-10%

23

+0

-10%

CONDUCTION ANGEL

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

UNITS

TEST CONDUCTIONS

K/W

180°

120°

90°

60°

30°

0.17

0.21

0.27

0.40

0.69

0.13

0.22

0.30

0.42

0.70

T = T maximum

J

J

• The table above shows the increment of thermal resistance R

when devices

thJC

Note

operate at different conduction angles than DC

25PTS Series

Page 3 of 6

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