LBC848BWT1G datasheet(4/9 Pages) LEIDITECH

Part #	LBC848BWT1G

Description	General Purpose Transistors NPN Silicon

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]

Direct Link	http://www.leiditech.com

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Figure 11. Base Emitter Saturation Voltage vs.

Collector Current

Figure 12. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

1.1

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

0.4

0.7

1.1

VCE = 5 V

150°C

−55°C

25°C

LBC846B

Figure 13. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 14. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

1.0

1.2

1.6

2.0

0.02

1.0

0.1

0.4

0.8

0.2

2.0

200

1.0

TA = 25°C

200 mA

50 mA

IC =

10 mA

0.05

0.2

0.5

2.0

5.0

100 mA

20 mA

1.4

1.8

2.2

2.6

3.0

0.5

5.0

100

-55

°C to 125°C

qVB for VBE

Figure 15. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 16. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

0.1

0.2

1.0

2.0

100

200

500

6.0

4.0

1.0

50 100

5.0

VCE = 5 V

TA = 25°C

0.5

5.0

TA = 25°C

Cob

Cib

LBC848BWT1G

Rev :

www.leiditech.com

01.06.2018

4/9

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