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LBC848BWT1G Datasheet(PDF) 7 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LBC848BWT1G Datasheet(HTML) 7 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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7 / 9 page ![]() Figure 29. Collector Saturation Region IB, BASE CURRENT (mA) Figure 30. Base−Emitter Temperature Coefficient IC, COLLECTOR CURRENT (mA) 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 0.2 1.0 10 100 -55 °C to +125°C TA = 25 °C IC = 50 mA IC = 100 mA IC = 200 mA IC = 20 mA IC = 10 mA 1.0 Figure 31. Capacitances VR, REVERSE VOLTAGE (VOLTS) 10 Figure 32. Current−Gain − Bandwidth Product IC, COLLECTOR CURRENT (mAdc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.0 5.0 3.0 0.5 VCE = 10 V TA = 25°C 0.8 4.0 8.0 TA = 25°C Cob Cib LBC847C, LBC848C LBC848BWT1G Rev : www.leiditech.com 01.06.2018 7/9 |
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