M28F420 datasheet(25/38 Pages) STMICROELECTRONICS

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Parameter

Test Conditions

M28F410 / 420

Unit

Min

Typ

Max

Main Block Program (Byte)

VPP = 12V

±5%

1.2

4.2

sec

Main Block Program (Word)

VPP = 12V

±5%

0.6

2.1

sec

Boot or Parameter Block Erase

VPP = 12V

±5%

sec

Main Block Erase

VPP = 12V

±5%

2.4

sec

Table 21. Word/Byte Program, Erase Times

(TA = 0 to 70

°C; VCC =5V ± 10% or 5V ± 5%)

E Chip Enable. The Chip Enable activates the

memory control logic, input buffers, decoders and

sense amplifiers. E High de-selects the memory

and reduces the power consumption to the standby

level. E can also be used to control writing to the

command register and to the memory array, while

W remains at a low level. Both addresses and data

inputs are then latched on the rising edge of E.

RP Reset/Power Down. This is a tri-level input

which locks the Boot Block from programming and

erasure, and allows the memory to be put in deep

power down.

When RP is High (up to 6.5V maximum) the Boot

Block is locked and cannot be programmed or

erased. When RP is above 11.4V the Boot Block is

unlocked for programming or erasure. With RP Low

the memory is in deep power down, and if RP is

within VSS+0.2V the lowest supply current is ab-

sorbed.

G Output Enable. The Output Enable gates the

outputs through the data buffers during a read

operation.

W Write Enable. It controls writing to the Com-

mand Reg ister and Input Address and Data

latches. Both Addresses and Data Input s are

latched on the rising edge of W.

BYTE Byte/Word Organization Select. This input

selects either byte-wide or word-wide organization

of the memory. When BYTE is Low the memory is

organized x8 or byte-wide and data input/output

uses DQ0-DQ7 while A-1 acts as the additional,

LSB, of the memory address that multiplexes the

upper or lower byte. In the byte-wide organization

DQ8-DQ14 are high impedance. When BYTE is

High the memory is organized x16 and data in-

put/output uses DQ0-DQ15 with the memory ad-

dressed by A0-A17.

VPP Program Supply Voltage. This supply voltage

is used for memory Programming and Erase.

VPP

±10% tolerance option is provided for applica-

tion requiring maximum 100 write and erase cycles.

VCC Supply Voltage. It is the main circuit supply.

VSS Ground. It is the reference for all voltage

measurements.

DEVICE OPERATION (cont’d)

Parameter

Test Conditions

M28F410 / 420

Unit

Min

Typ

Max

Main Block Program (Byte)

VPP = 12V

±5%

1.4

sec

Main Block Program (Word)

VPP = 12V

±5%

0.7

2.5

sec

Boot or Parameter Block Erase

VPP = 12V

±5%

1.5

10.5

sec

Main Block Erase

VPP = 12V

±5%

sec

Table 22. Word/Byte Program, Erase Times

(TA = –40 to 85

°C or –40 to 125°C; VCC =5V ± 10% or 5V ± 5%)

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