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M28F420 Datasheet(PDF) 4 Page - STMicroelectronics |
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M28F420 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 38 page ![]() Mne- monic Instruction Cycles 1st Cycle 2nd Cycle Operation Address (1) Data (4 ) Operation Address Data RD Read Memory Array 1+ Write X 0FFh Read (2) Read Address Data RSR Read Status Register 1+ Write X 70h Read (2) X Status Register RSIG Read Electronic Signature 3 Write X 90h Read (2) Signature Adress (3) Signature EE Erase 2 Write X 20h Write Block Address 0D0h PG Program 2 Write X 40h or 10h Write Address Data Input CLRS Clear Status Register 1 Write X 50h ES Erase Suspend 1 Write X 0B0h ER Erase Resume 1 Write X 0D0h Notes: 1. X = Don’t Care. 2. The first cycle of the RD, RSR or RSIG instruction is followed by read operations to read memory array, Status Register or Electronic Signature codes. Any number of Read cycle can occur after one command cycle. 3. Signature address bit A0=VIL will output Manufacturer code. Address bit A0=VIH will output Device code. Other address bits are ignored. 4. When word organization is used, upper byte is don’t care for command input. Table 5. Instructions Hex Code Command 00h Invalid/Reserved 10h Alternative Program Set-up 20h Erase Set-up 40h Program Set-up 50h Clear Status Register 70h Read Status Register 90h Read Electronic Signature 0B0h Erase Suspend 0D0h Erase Resume/Erase Confirm 0FFh Read Array Table 6. Commands Blocks Erasure of the memories is in blocks. There are 7 blocks in the memory address space, one Boot Block of 16K Bytes or 8K Words, two ’Key Parame- ter Blocks’ of 8K Bytes or 4K Words, one ’Main Block’ of 96K Bytes or 48K Words, and three ’Main Blocks’ of 128KBytes or 64K Words. The M28F410 memory has the Boot Block at the top of the mem- ory address space (3FFFFh) and the M28F420 locates the Boot Block starting at the bottom (00000h). Erasure of each block takes typically 1 second and each block can be programmed and erased over 100,000 cycles. The Boot Block is hardware protected from acci- dental programming or erasure depending on the RP signal. Program/Erase commands in the Boot Block are executed only when RP is at 12V. Block erasure may be suspended while data is read from other blocks of the memory, then resumed. Bus Operations Six operationscan be performed by the appropriate bus cycles, Read Byte or Word from the Array, Read Electronic Signature, Output Disable, Standby, Power Down and Write the Command of an Instruction. Command Interface Commands can be written to a Command Interface (C.I.) latch to perform read, programming, erasure and to monitor the memory’s status. When power 4/38 M28F410, M28F420 |
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