Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Common features

VIL

Low level input voltage, EN

pin

eFuse outputs enabled

0.7

V

VIH

High level input voltage, EN

pin

eFuse outputs disabled

1.7

V

REN

Pull-down resistor on EN

pin

Connected to GND

3.3

MΩ

IEN

EN pin consumption

VEN = 5 V

1.5

µA

VIL_IMSL

IMON_SEL low level input

voltage

IMON_5/12 pin outputs IMON_5

0.4

V

VIH_IMSL

IMON_SEL high level input

voltage

IMON_5/12 pin outputs IMON_12

1.2

V

VIMSL

IMON_SEL pin pull-up voltage

1.8

V

IIMSL

IMON_SEL pin pull-up current

generator

IMON_SEL pin to GND

5

µA

VIL_SATAIG

SATA ignore low level input

voltage

SAS pin signal ignored

0.4

V

VIH_SATAIG

SATA ignore high level input

voltage

SAS pin signal active

1.2

V

VSATAIG

SATA ignore pin pull-up

voltage

1.8

V

ISATAIG

SAS ignore pin pull-up

current generator

SATAIG pin to GND

5

µA

TDELAY

Delay time (2)

From EN set to low state to soft-

start ramp beginning

500

µs

Iq

Quiescent current (GND)

Device operating, no load

400

600

µA

Off-state, VEN = 5 V

150

µA

Thermal protection

TSD (2)

Shutdown temperature

165

°C

Hysteresis

30

1. Values across temperature range are guaranteed by design/correlation and tested in production only at ambient

temperature.

2. Guaranteed by design, but not tested in production.

STEF512SRI

Electrical characteristics

DS14138 - Rev 1

page 7/28