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TSB582 Datasheet(PDF) 18 Page - STMicroelectronics

Part # TSB582
Description  200 mA output current with thermal shutdown and output current limiter, 3.1 MHz,36 V, BiCMOS dual operational amplifier
PDF  34 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSB582 Datasheet(HTML) 18 Page - STMicroelectronics

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Figure 28. EMI rejection ratio vs. frequency
EMIRR performance might be improved by adding small capacitances (in the pF range) on the inputs,
power supply, and output pins. These capacitances help in minimizing the impedance of these nodes at high
frequencies.
5.4
Input offset voltage drift versus temperature
The maximum input voltage drift variation overtemperature is defined as the offset variation related to the offset
value measured at 25 °C. The operational amplifier is one of the main circuits of the signal conditioning chain,
and the amplifier input offset (Vio) is a major contributor to the chain accuracy. The signal chain accuracy at 25
°C can be compensated during production at application level. The maximum input voltage drift overtemperature
enables the system designer to anticipate the effect of temperature variations. The maximum input voltage drift
overtemperature is computed using Equation:
∆ Vio∆ T=maxVioT−Vio25°C
T−25°C T= −40°C to T=125°C
(2)
The datasheet maximum value is guaranteed by a measurement on a representative sample size ensuring a Cpk
(process capability index) greater than 1.3.
5.5
Maximum power dissipation
The usable output load current drive is limited by the maximum power dissipation allowed by the device package.
The absolute maximum junction temperature for the TSB582 is 150 °C. The junction temperature can be
estimated as follows:
Tj=Pd×Rtℎja+Ta
(3)
TJ is the die junction temperature
Pd is the power dissipated in the package
Rthja is the junction to ambient thermal resistance of the package
Ta is the ambient temperature
The power dissipated in the package Pd is the sum of three main sources of both amplifier channels. The
quiescent power, the power dissipated by the output stage transistor, and the input protection circuit in case the
differential input voltage is forced to |Vid| > 1.3 V (see Section 5.2 ESD and input protection). It is calculated as
follows.
Pd=Pd_amp1+Pd_amp2
(4)
Pd_amp=Vcc×Icc+ Vcc+−Vout ×Iload+ Vid − 1.3V ×Vid
1.5kΩ ifVid>1.3V
(5)
TSB582
Input offset voltage drift versus temperature
DS13378 - Rev 2
page 18/34



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