| Electronic Components Datasheet Search |
|
ISO808ATR Datasheet(PDF) 12 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
ISO808ATR Datasheet(HTML) 12 Page - STMicroelectronics |
|
12 / 38 page ![]() Table 9. Serial interface timings (VDD = 5 V; VCC = 24 V; -40 °C < TJ < 125 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit fCLK SPI clock frequency 20 MHz TCLK SPI clock period 50 ns tr(CLK) tf(CLK) SPI clock rise/fall time (see Figure 7, Figure 8) 5 ns tsu(SS) SS setup time (see Figure 7, Figure 8) 80 ns th(SS) SS hold time (see Figure 7, Figure 8) 80 ns tc(SS) SS disable time (see Figure 7, Figure 8) 20 μs tw(CLK) CLK high time (see Figure 7, Figure 8) 15 ns tsu(SDI) Data input setup time (see Figure 7, Figure 8) 6 ns th(SDI) Data input hold time (see Figure 7, Figure 8) 6 ns ta(SDO) Data output access time (see Figure 7, Figure 8) RPULL-DOWN = 300 Ω CLOAD = 50 pF 25 ns tdis(SDO) Data output disable time (see Figure 7, Figure 8) 20 ns tv(SDO) Data output valid time (see Figure 7, Figure 8) 20 ns tJITTER Jitter on single channel tCYCLE ( SS) = 20 μs 6 μs Jitter on single channel tCYCLE ( SS) < 20 μs 20 Table 10. Internal communication timings (VDD = 5 V; VCC = 24 V; -40 °C < TJ < 125 °C) Symbol Parameter Test condition Min. Typ. Max. Unit frefresh Refresh delay 15 kHz tWD Watchdog time 272 320 400 μs Table 11. Insulation and safety-related specifications Symbol Parameter Test conditions Value Unit CLR(1) Clearance (minimum external air gap) Measured from input terminals to output terminals, shortest distance through air 2.6 mm CPG(1) Creepage (minimum external tracking) Measured from input terminals to output terminals, shortest distance path along body 2.6 mm CTI(2) Comparative tracking index (tracking resistance) ≥400 V Isolation group Material group II - 1. Creepage and clearance requirements should be applied according to the specific equipment isolation standard of an application. Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the PCB do not reduce this distance. 2. When high voltage is applied across the isolator, electric discharges on or close to the surface of the package, can cause localized deterioration in the mold compound, resulting in a partially conducting path from one side of the isolator to the other. This phenomenon is called tracking. The ability of a material to withstand tracking is quantified by a comparative tracking index (CTI). Using a mold compound with a higher CTI allows the use of smaller packages and saves board space. ISO808A, ISO808A-1 Electrical characteristics DS14170 - Rev 1 page 12/38 |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |