BLW98 datasheet(5/13 Pages) PHILIPS

5 / 13 page

August 1986

Philips Semiconductors

Product speciﬁcation

UHF linear power transistor

BLW98

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Notes

1. Measured under pulse conditions: tp ≤ 300 µs; δ≤ 0,02.

2. Measured under pulse conditions: tp ≤ 50 µs; δ≤ 0,01.

Collector-emitter breakdown voltage

VBE = 0; IC = 10 mA

V(BR)CES

50 V

open base, IC = 25 mA

V(BR)CEO

27 V

Emitter-base breakdown voltage

open collector, IE = 5 mA

V(BR)EBO

3,5 V

D.C. current gain(1)

typ.

IC = 850 mA; VCE = 25 V

hFE

Collector-emitter saturation voltage(1)

IC = 500 mA; IB = 100 mA

VCEsat

typ.

0,25 V

Transition frequency at f = 500 MHz(2)

−IE = 850 mA; VCB = 25 V

typ.

2,5 GHz

Collector capacitance at f = 1 MHz

typ.

IE =Ie = 0; VCB = 25 V

Feedback capacitance at f = 1 MHz

IC = 50 mA; VCE = 25 V

Cre

typ.

15 pF

Collector-stud capacitance

Ccs

typ.

1,2 pF

Fig.5 Typical values; VCE = 25 V.

handbook, halfpage

0.5

1.5

10−1

10−2

MGP720

Th = 70 °C

°C

(A)

VBE (V)

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