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BLW98 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLW98 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 13 page ![]() August 1986 3 Philips Semiconductors Product specification UHF linear power transistor BLW98 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE =0 VCESM max. 50 V open base VCEO max. 27 V Emitter-base voltage (open collector) VEBO max. 3,5 V Collector current d.c. IC max. 2 A (peak value); f > 1 MHz ICM max. 4 A Total power dissipation at Th =70 °CPtot max. 21,5 W Storage temperature Tstg −65 to +150 °C Operating junction temperature Tj max. 200 °C Fig.2 D.C. SOAR. (1) Second breakdown limit (independent of temperature). handbook, halfpage 10 IC (A) VCE (V) 1 10−1 MGP717 110 102 Th = 70 °C Tmb = 25 °C (1) Fig.3 Power derating curve vs. temperature. handbook, halfpage 0 40 30 20 10 50 100 MGP718 Ptot (W) Th (°C) THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75 °C, Th =70 °C) From junction to mounting base Rth j-mb = 5,45 K/W From mounting base to heatsink Rth mb-h = 0,6 K/W |
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