August 1986

2

Philips Semiconductors

Product specification

UHF linear power transistor

BLW98

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

linear u.h.f. amplifiers of TV

transposers and transmitters in band

IV-V, as well as for driver stages in

tube systems.

FEATURES:

• diffused emitter ballasting resistors

for an optimum temperature profile;

• gold sandwich metallization

ensures excellent reliability.

envelope with ceramic cap. All leads

are isolated from the stud.

QUICK REFERENCE DATA

R.F. performance in linear amplifier

Note

1. Three-tone test method (vision carrier

−8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to

peak sync level.

MODE OF OPERATION

MHz

V

mA

°C

dB

W

dB

class-A

860

25

850

70

−60

>

3,5

>

6,5

class-A

860

25

850

25

−60

typ.

4,4

typ.

7,0

PIN CONFIGURATION

Fig.1 Simplified outline. SOT122A.

handbook, halfpage

Top view

MBK187

3

1

2

4

PINNING - SOT122A.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.