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SST25VF080B Datasheet(PDF) 1 Page - Microchip Technology |
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SST25VF080B Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 33 page  2005-2020 Microchip Technology Inc. DS20005045D-page 1 SST25VF080B Features • Single Voltage Read and Write Operations - 2.7V-3.6V • Serial Interface Architecture: - SPI Compatible: Mode 0 and Mode 3 • High-Speed Clock Frequency: - Up to 66 MHz • Superior Reliability: - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention • Low-Power Consumption: - Active Read Current: 10 mA (typical) - Standby Current: 5 µA (typical) • Flexible Erase Capability: - Uniform 4-Kbyte sectors - Uniform 32-Kbyte overlay blocks - Uniform 64-Kbyte overlay blocks • Fast Erase and Byte Program: - Chip Erase Time: 35 ms (typical) - Sector/Block Erase Time: 18 ms (typical) - Byte Program Time: 7 µs (typical) • Auto Address Increment (AAI) Programming: - Decrease total chip programming time over Byte Program operations • End of Write Detection: - Software polling the BUSY bit in STATUS Register - Busy Status readout on SO pin in AAI Mode • Hold Pin (HOLD#): - Suspends a serial sequence to the memory without deselecting the device • Write Protection (WP#): - Enables/Disables the Lock-Down function of the STATUS register • Software Write Protection: - Write protection through Block Protection bits in STATUS register • Temperature Range: - Commercial: 0°C to +70°C - Industrial: -40°C to +85°C • All devices are RoHS compliant Packages • 8-lead PDIP (300 mils), 8-lead SOIC (200 mils), 8-contact WSON (6 mm x 5 mm) and 16-ball XFBGA (Z-Scale™) See Figure 2-1 for pin assignments. Description 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ulti- mately lowers total system costs. The SST25VF080B devices are enhanced with improved operating fre- quency and lower power consumption. SST25VF080B SPI serial flash memories are manufactured with pro- prietary, high-performance CMOS SuperFlash® tech- nology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufac- turability compared with alternate approaches. The SST25VF080B devices significantly improve per- formance and reliability, while lowering power con- sumption. The devices write (program or erase) with a single power supply of 2.7V-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or pro- gram operation is less than alternative flash memory technologies. 8-Mbit SPI Serial Flash |
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