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IXTH30N50L2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXTH30N50L2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 9 page  ISF1220 eq IXTH30N50L2 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 215mΩ(Max) @ VGS= 10V APPLICATIONS · Current Regulators · Solid State Circuit Breakers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulse 60 A PD Total Dissipation @TC=25℃ 400 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.31 ℃ /W |
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