AiT Semiconductor Inc.

WSI

www.ait-ic.com

WIRE WOUND SMD INDUCTOR

REV1.1

- 3 -

●ELECTRICAL CHARACTERISTICS

Part Number

Inductance (uH)

DCR

(mΩ) Typ.

DCR

(mΩ)Max.

Isat (A)

Max.

Irms (A)

Max.

WSI04012J-R22M

0.22

7.80

9.30

10.00

9.00

WSI04012J-R47M

0.47

16.50

20.00

9.00

6.50

WSI04012J-R56M

0.56

22.00

25.00

8.00

5.50

WSI04012J-R68M

0.68

18.80

20.68

8.00

5.40

WSI04012J-1R0M

1.00

28.30

33.60

6.33

4.80

WSI04012J-1R2M

1.20

41.00

45.00

6.00

3.00

WSI04012J-1R5M

1.50

45.00

50.00

5.50

3.00

* Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient

* M=Tolerance=±20%

* Irms: Rated Current Loading when temperature rise approximately 40℃.

* Isat: Saturated Current measured at the point of L drop approximately 20%

Part Number

Inductance (uH)

DCR

(mΩ) Typ.

DCR

(mΩ)Max.

Isat (A)

Max.

Irms (A)

Max.

WSI04012M-R33M

0.33

17.00

19.00

8.40

6.50

WSI04012M-R47M

0.47

19.00

21.00

6.80

6.00

WSI04012M-1R0M

1.00

43.00

47.00

5.20

4.20

WSI04012M-1R5M

1.50

68.00

75.00

4.00

3.25

WSI04012M-2R2M

2.20

79.40

83.50

3.50

2.75

* Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient

* M=Tolerance=±20%

* Irms: Rated Current Loading when temperature rise approximately 40℃.

* Isat: Saturated Current measured at the point of L drop approximately 20%

Part Number

Inductance (uH)

DCR

(mΩ) Typ.

DCR

(mΩ)Max.

Isat (A)

Max.

Irms (A)

Max.

WSI04015J-R22M

0.22

6.40

7.60

11.00

9.50

WSI04015J-R47M

0.47

12.00

14.40

9.00

7.50

WSI04015J-1R0M

1.00

23.50

27.00

7.00

5.00

WSI04015J-1R2M

1.20

28.30

33.60

6.00

4.90

WSI04015J-1R5M

1.50

32.00

38.40

6.00

4.00

WSI04015J-2R2M

2.20

47.00

56.40

4.50

3.00

* Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient

* M=Tolerance=±20%

* Irms: Rated Current Loading when temperature rise approximately 40℃.

* Isat: Saturated Current measured at the point of L drop approximately 20%