AiT Semiconductor Inc.

WSI

www.ait-ic.com

WIRE WOUND SMD INDUCTOR

REV1.1

- 4 -

Part Number

Inductance (uH)

DCR

(mΩ) Typ.

DCR

(mΩ)Max.

Isat (A)

Max.

Irms (A)

Max.

WSI04020E-R10M

0.10

3.50

4.00

22.00

12.00

WSI04020E-R22M

0.22

6.00

6.60

12.50

9.00

WSI04020E-R47M

0.47

12.50

14.00

9.50

7.00

WSI04020E-R56M

0.56

14.00

16.00

10.00

6.50

WSI04020E-R68M

0.68

16.00

18.00

9.00

6.00

WSI04020E-1R0M

1.00

24.00

27.00

7.00

4.50

WSI04020E-1R2M

1.20

24.00

27.00

7.00

4.50

WSI04020E-1R5M

1.50

38.00

46.00

6.00

4.00

WSI04020E-2R2M

2.20

52.00

58.00

5.00

3.00

WSI04020E-3R3M

3.30

74.00

87.00

4.00

2.50

WSI04020E-4R7M

4.70

98.00

110.00

3.50

2.00

WSI04020E-6R8M

6.80

140.00

175.00

2.50

2.00

WSI04020E-100M

10.00

256.00

282.00

2.20

1.20

* Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient

* M=Tolerance=±20%

* Irms: Rated Current Loading when temperature rise approximately 40℃.

* Isat: Saturated Current measured at the point of L drop approximately 20%

Part Number

Inductance (uH)

DCR

(mΩ) Typ.

DCR

(mΩ)Max.

Isat (A)

Max.

Irms (A)

Max.

WSI04020J-R22M

0.22

5.40

7.00

11.50

11.50

WSI04020J-R36M

0.36

9.50

12.00

11.00

9.00

WSI04020J-R47M

0.47

10.00

12.00

10.00

7.00

WSI04020J-R56M

0.56

12.80

14.70

8.00

7.00

WSI04020J-R68M

0.68

13.50

17.00

7.00

6.30

WSI04020J-R82M

0.82

16.00

18.00

6.50

6.00

WSI04020J-R88M

0.88

16.00

18.00

6.50

6.00

WSI04020J-1R0M

1.00

18.00

21.50

5.00

5.00

WSI04020J-1R2M

1.20

19.00

22.00

5.00

5.00

WSI04020J-1R5M

1.50

25.40

29.00

5.00

5.00

WSI04020J-2R2M

2.20

33.00

40.00

5.00

3.90

WSI04020J-3R3M

3.30

42.00

48.00

4.30

3.30

WSI04020J-4R7M

4.70

68.00

75.00

4.00

2.70

WSI04020J-5R6M

5.60

81.00

90.00

3.50

2.40

* Test Condition: @100KHz, 1.0Vrms, 25℃ Ambient

* M=Tolerance=±20%

* Irms: Rated Current Loading when temperature rise approximately 40℃.

* Isat: Saturated Current measured at the point of L drop approximately 20%