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STB14NK60Z Datasheet(PDF) 6 Page - STMicroelectronics

Part # STB14NK60Z
Description  N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET
PDF  19 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB14NK60Z Datasheet(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=300 V, ID=6A,
RG=4.7Ω, VGS=10V
(see Figure 18)
26
18
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=300V, ID=6A,
RG=4.7Ω, VGS=10V
(see Figure 18)
62
13
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=480 V, ID=12A,
RG=4.7Ω, VGS=10V
(see Figure 20)
12
9.5
22
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
12
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
48
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=12A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A,
di/dt = 100A/µs,
VDD=50V
490
4.7
19.3
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
664
6.8
20.5
ns
µC
A



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