STB14NK60Z datasheet(5/19 Pages) STMICROELECTRONICS

Part #	STB14NK60Z

Description	N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 19 page

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z Electrical characteris-

5/19

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

600

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±30V

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 100µA

3.75

4.5

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 6A

0.45

0.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID = 6A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

2220

240

Coss eq

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

inceases from 0 to 80% VDSS

Equivalent output

capacitance

VGS=0, VDS =0V to 480V

122

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=480V, ID = 12A

VGS =10V

13.2

38.6

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