STB14NK60Z datasheet(3/19 Pages) STMICROELECTRONICS

Part #	STB14NK60Z

Description	N-channel 600V - 0.45Ω - 13.5A TO-220/FP-D2/I2PAK-TO-247 Zener-protected SuperMESH™ Power MOSFET

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

3 / 19 page

STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-STW14NK60Z

Electrical ratings

3/19

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

600

VDGR

Drain-gate voltage (RGS = 20KΩ)

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25°C

13.5

13.5(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC=100°C

8.5

8.5(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

54 (1)

PTOT

Total dissipation at TC = 25°C

160

Derating factor

1.28

0.32

W/°C

VESD(G-S)

Gate source ESD (HBM-C= 100pF, R=

1.5k

Ω)

4000

dv/dt(3)

ISD ≤13.5A, di/dt ≤200A/µs, VDD≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (DC)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 2.

Thermal data

Symbol

Parameter

Value

Unit

TO-220/D²PAK/I²PAK

TO-247

TO-220FP

Rthj-case

Thermal resistance junction-case Max

0.78

3.1

°C/W

Rthj-a

Thermal resistance junction-ambient

Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

STB14NK60Z Datasheet(PDF) 3 Page - STMicroelectronics

STB14NK60Z Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Datasheet Download

Link URL