LMV232

SNWS017C – DECEMBER 2004 – REVISED MARCH 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1) (2)

Supply Voltage

VDD - GND

3.6V Max

ESD Tolerance (3)

Human Body Model

2000V

Machine Model

200V

Storage Temperature Range

-65°C to 150°C

Junction Temperature (4)

150°C Max

Mounting Temperature

Infrared or Convection (20 sec)

235°C

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

(2)

If Military/Aerospace specified devices are required, please contact the TI Sales Office/ Distributors for availability and specifications.

(3)

Human body model: 1.5 k

Ω in series with 100 pF. Machine model, 0Ω in series with 100 pF.

(4)

The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient

temperature is PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.

OPERATING RATINGS

(1)

Supply Voltage

2.5V to 3.3V

Operating Temperature Range

-40°C to +85°C

RF Frequency Range

50 MHz to 2 GHz

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test

conditions, see the Electrical Characteristics.

2.7 DC AND AC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes.

(1)

Symbol

Parameter

Condition

Min

Typ

Max

Units

IDD

Supply Current

Active Mode: SD = LOW, No RF

9.8

11

mA

Input Power Present

13

Shutdown: SD = 1.8V, No RF Input

0.09

5

μA

Power Present

30

VLOW

BS and SD Logic Low Level (2)

0.8

V

VHIGH

BS and SD Logic High Level (2)

1.8

V

IBS, ISD

Current into BS and SD pins

5

µA

VOUT

Output Voltage Swing

From Positive Rail, Sourcing,

20

80

mV

FB = 0V, IOUT = 1 mA

90

From Negative Rail, Sinking,

20

60

mV

FB = 2.7V, IOUT = −1 mA

70

IOUT

Output Short Circuit

Sourcing, FB = 0V, VOUT = 2.6V

3.7

5.1

mA

2.7

Sinking, FB = 2.7V, VOUT = 0.1V

3.7

5.5

2.7

235

275

VOUT

Output Voltage (Pedestal)

No RF Input Power

254

mV

230

280

Pedestal Variation Over

VPED

5.4

mV

Temperature (3)

Offset Current Variation Over

IOS

1.17

µA

Temperature (3)

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that TJ = TA. No ensured specification of parametric performance is indicated in the electrical

tables under conditions of internal self-heating where TJ > TA.

(2)

All limits are specified by design or statistical analysis.

(3)

Typical numbers represent the 3-sigma value of 10k units. 3-sigma value of variation between

−40°C / 25°C and variation between 25°C

/ 85°C.

2

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