A1

RFIN1

B1

GND

C1

RFIN2

C3

SD

B3

VDD

A3

OUT

A2

FB

C2

BS

LMV232

www.ti.com

SNWS017C – DECEMBER 2004 – REVISED MARCH 2013

2.7 DC AND AC ELECTRICAL CHARACTERISTICS (continued)

Unless otherwise specified, all limits are specified to VDD = 2.7V; TJ = 25°C. Boldface limits apply at temperature extremes.

(1)

Symbol

Parameter

Condition

Min

Typ

Max

Units

No RF Input Power Present, Output

2.0

6.0

tON

Turn-on-Time (4)

μs

Loaded with 10 pF

tR

Rise Time (5)

Step from No Power to 0 dBm

4.5

μs

Applied, Output Loaded with 10 pF

RF Input = 1800 MHz, -10 dBm,

en

Output Referred Voltage Noise

400

nV/

Measured at 10 kHz

GBW

Gain Bandwidth Product

3.7

MHz

1.8

SR

Slew Rate

3.0

V/

μs

1.0

RIN

DC Resistance

See (5)

50.8

Ω

-11

dBm

+13

PIN

RF Input Power Range(6)(7)

RF Input Frequency = 900 MHz

-24

dBV

0

900 MHz

21

1800 MHz

10

KDET

Detection Slope

μA/mW

1900 MHz

10

2000 MHz

10

Lower

−3 dB Point of Detection

fLOW

LF Input Corner Frequency

60

MHz

Slope

Upper

−3 dB Point of Detection

fHIGH

HF Input Corner Frequency

1.0

GHz

Slope

900 MHz

58

1800 MHz

62

AISO

Channel Isolation

dB

1900 MHz

58

2000 MHz

55

(4)

Turn-on time is measured by connecting a 10 k

Ω resistor to the RFIN/EN pin. Be aware that in the actual application on the front page,

the RC-time constant of resistor R2 and capacitor C adds an additional delay.

(5)

Typical values represent the most likely parametric norm.

(6)

Power in dBV = dBm + 13 when the impedance is 50

Ω.

(7)

Device is set in active mode with a 10 k

Ω resistor from VDD to RFIN/EN. RF signal is applied using a 50Ω RF signal generator AC

coupled to the RFIN/EN pin using a 100 pF coupling capacitor.

CONNECTION DIAGRAM

Figure 1. 8-Bump DSBGA - Top View

Copyright © 2004–2013, Texas Instruments Incorporated

Submit Documentation Feedback

3

Product Folder Links: LMV232