VN770KP datasheet(12/33 Pages) STMICROELECTRONICS

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Electrical specifications

VN770KP-E

12/33

DocID022021 Rev 4

Tj = 25°C, unless otherwise specified.

Table 13. On-state

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

RDS(on)

Static drain source on

resistance

VIN = 5 V; ID = 3.5 A; Tj = 25°C

—

mΩ

VIN = 5 V; ID = 3.5 A

—

130

mΩ

Table 14. Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

gfs(1)

1. Pulsed: Pulse duration = 300μs, duty cycle 1.5%

Forward trans

conductance

VDD = 13 V; ID = 3.5 A

—

COSS

Output capacitance

VDS = 13 V; f = 1 MHz; VIN = 0 V

—

220

—

Table 15. Switching

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

td(on)

Turn-on delay time

VDD = 15 V; ID = 3.5 A; Vgen = 5 V;

Rgen = RIN MIN = 150 Ω

—

100

300

Rise time

—

470

1500

td(off)

Turn-off delay time

—

500

1500

Fall time

—

350

1000

td(on)

Turn-on delay time

VDD = 15 V; ID = 3.5 A; Vgen = 5 V;

Rgen = 2.2 KΩ

—

0.75

2.3

μs

Rise time

—

4.6

μs

td(off)

Turn-off delay time

—

5.4

μs

Fall time

—

3.6

μs

(dI/dt)on Turn-on current slope

VDD = 15 V; ID = 3.5 A; Vgen = 5 V;

Rgen = RIN MIN = 150 Ω

—

6.5

A/μs

Total input charge

VDD = 12 V; ID = 3.5 A; VIN = 5 V;

Igen = 2.13 mA

—

Table 16. Source drain diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VSD(1)

1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

ISD = 3.5 A; VIN = 0 V

—

0.8

—

trr

Reverse recovery time

ISD = 3.5 A; dI/dt = 20 A/μs;

VDD = 30 V; L = 200 μH

—

220

—

Qrr

Reverse recovery charge

—

0.28

—

μC

IRRM

Reverse recovery current

—

2.5

—

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