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SCT027TO65G3 Datasheet(PDF) 7 Page - STMicroelectronics

Part # SCT027TO65G3
Description  Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT027TO65G3 Datasheet(HTML) 7 Page - STMicroelectronics

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Figure 13. Typical reverse conduction characteristics
(TJ = 25 °C)
GPDP191120241622RCC25
-30
-60
-90
-120
-150
-180
-210
-8
-7
-6
-5
-4
-3
-2
-1
ID
(A)
VDS (V)
VGS= 18 V
VGS= 0 V
VGS= -5 V
Figure 14. Typical reverse conduction characteristics
(TJ = 175 °C)
GPDP191120241622RCC175
-30
-60
-90
-120
-150
-180
-210
-8
-7
-6
-5
-4
-3
-2
-1
ID
(A)
VDS (V)
VGS= 18 V
VGS= 0 V
VGS= -5 V
Figure 15. Typical switching energy vs drain current
GPDP191120241624SDC
400
300
200
100
0
0
10
20
30
40
50
60
E
(μJ)
ID (A)
Etot
RG = 5.6 Ω,
VDD = 400 V,
VGS = -5 to 18 V
Eoff
Eon
Figure 16. Typical switching energy vs supply voltage
GPDP191120241624VDD
250
200
150
100
50
0
150 200 250 300 350 400 450 500
E
(μJ)
VDD (V)
Etot
Eon
Eoff
VGS = -5 to 18 V
ID = 30 A,RG = 5.6 Ω,
Figure 17. Typical switching energy vs gate resistance
GPDP191120241626SLG
250
200
150
100
50
0
2
4
6
8
10
E
(μJ)
RG (Ω)
VDD = 400 V, ID = 30 A, VGS = -5 to 18 V
Etot
Eon
Eoff
SCT027TO65G3
Electrical characteristics
DS14846 - Rev 2
page 7/15



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