SCT027TO65G3 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 3. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain current

VGS = 0 V, VDS = 650 V

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = -10 to 22 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 5 mA

1.8

3.0

4.2

RDS(on)

Static drain-source on-resistance

VGS = 15 V, ID = 30 A

32.8

mΩ

VGS = 18 V, ID = 30 A

39.3

VGS = 18 V, ID = 30 A, TJ = 175 °C

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 400 V, f = 1 MHz, VGS = 0 V

1173

Coss

Output capacitance

128

Crss

Reverse transfer capacitance

Total gate charge

VDD = 400 V, VGS = -5 to 18 V, ID = 30 A

52.9

Qgs

Gate-source charge

15.4

Qgd

Gate-drain charge

18.5

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.5

Table 5. Switching energy (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Eon

Turn-on switching energy

VDD = 400 V, ID = 30 A,

RG = 5.6 Ω, VGS = -5 to 18 V

83.3

µJ

Eoff

Turn-off switching energy

99.6

µJ

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 30 A,

RG = 5.6 Ω, VGS = -5 to 18 V

15.9

Rise time

6.9

td(off)

Turn-off delay time

28.8

Fall time

8.2

SCT027TO65G3

Electrical characteristics

DS14846 - Rev 2

page 3/15

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