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SCT027TO65G3 Datasheet(PDF) 2 Page - STMicroelectronics

Part # SCT027TO65G3
Description  Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT027TO65G3 Datasheet(HTML) 2 Page - STMicroelectronics

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1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
650
V
VGS
Gate-source voltage
-10 to 22
V
Gate-source voltage (recommended operating values)
-5 to 18
Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime
-11 to 25
ID(1)
Drain current (continuous) at TC = 25 °C
60
A
Drain current (continuous) at TC = 100 °C
60
IDM(2)
Drain current (pulsed)
267
A
PTOT
Total power dissipation at TC = 25 °C
395
W
Tstg
Storage temperature range
-55 to 175
°C
TJ
Operating junction temperature range
°C
1. Limited by bonding wires.
2. Pulse width is limited by safe operating area.
Table 2. Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance, junction-to-case
0.38
°C/W
RthJA
Thermal resistance, junction-to-ambient
50
°C/W
SCT027TO65G3
Electrical ratings
DS14846 - Rev 2
page 2/15



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