DIO59618A datasheet(9/33 Pages) DIOO

9 / 33 page

DIO59618A

Version 1.0, Oct 2025

www.dioo.com

5. Electrical Characteristics

VBUS = 5 V, TA = 25°C, unless otherwise specified.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

System

ISTDB

Standby current

μA

ISHIP

Ship current, LDO enabled

μA

Ship current, LDO disabled

μA

Bias supply (VBUS)

VBUS

Supply voltage

4.5

5.5

VUVLO

Input UVLO threshold

VBUS rising and measured from VBUS

to GND

4.1

4.3

4.45

ΔVUVLO

UVLO hysteresis

Measured from VBUS to GND

200

VOVP

Input overvoltage protection

Input overvoltage rising and

measured from VBUS to GND

5.8

6.3

ΔVOVP

Input overvoltage protection

hysteresis

Measured from VBUS to GND

200

VSP

Voltage sag protection

4.5

4.7

IBUS_LIMIT

VBUS limit current

2.5

3.5

Power supplies

IBUS

VBUS current

VBUS > VBUS(min), PWM enabled,

not switching

0.45

ILKG

VBAT to VBUS leakage current

0°C < TA < 85°C, VBAT = 4.2 V,

VBUS = 0 V

μA

IBAT

Battery is charge current in

high-impedance mode

0°C < TA < 85°C,

VBAT = 4.2 V

μA

Charger voltage regulation

VOREG

Float voltage(2)

TA = 25°C

4.2

Charge voltage accuracy

TA = 25°C

-0.5

0.5

ΔVRCH

Recharge voltage

150

200

250

Deglitch time

VBAT falling below VRCH threshold

Oscillator and PWM

fSW

Switching frequency

VBUS

= 5.0 V, VBAT = 3.8 V, ICC =

500 mA

800

1000

1200

kHz

Power MOSFET

RMAINHS(1)

RDS(ON) of high side P-FET

140

mΩ

RMAINLS(1)

RDS(ON) of low side N-FET

100

mΩ

R_BUS

RDS(ON) of VBUS input

Q3 + Q4

180

mΩ

DIO59618A Datasheet(PDF) 9 Page - DIOO MICROCIRCUITS CO., LTD

DIO59618A Datasheet(HTML) 9 Page - DIOO MICROCIRCUITS CO., LTD

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33

Datasheet Download

Link URL