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33912 Datasheet(PDF) 13 Page - Freescale Semiconductor, Inc |
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33912 Datasheet(HTML) 13 Page - Freescale Semiconductor, Inc |
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13 / 47 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 13 33912 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS LIN PHYSICAL LAYER, TRANSCEIVER (LIN)(39) Output Current Limitation Dominant State, VBUS = 18V IBUSLIM 40 120 200 mA Leakage Output Current to GND Dominant State; VBUS = 0V; VBAT = 12V Recessive State; 8V < V BAT < 18V; 8V < VBUS < 18V; VBUS ≥ VBAT GND Disconnected; GNDDEVICE = VSUP; VBAT = 12V; 0 < VBUS < 18V VBAT Disconnected; VSUP_DEVICE = GND; 0 < VBUS < 18V IBUS_PAS_dom IBUS_PAS_REC IBUS_NO_GND IBUS -1.0 – -1.0 – – – – – – 20 1.0 100 mA µA mA µA Receiver Input Voltages Receiver Dominant State Receiver Recessive State Receiver Threshold Center (VTH_DOM + VTH_REC)/2 Receiver Threshold Hysteresis (VTH_REC - VTH_DOM) VBUSDOM VBUSREC VBUS_CNT VHYS – 0.6 0.475 – – – 0.5 – 0.4 – 0.525 0.175 VSUP LIN Transceiver Output Voltage Recessive State, TXD HIGH, IOUT = 1.0µA Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 0 Dominant State, TXD LOW, 500 Ω External Pull-up Resistor, LDVS = 1 VLIN_REC VLIN_DOM_0 VLIN_DOM_1 VSUP -1.0 – – – 1.1 1.7 – 1.4 2 V LIN Pull-up Resistor to VSUP RSLAVE 20 30 60 k Ω Over-temperature Shutdown(40) TLINSD 150 165 180 °C Over-temperature Shutdown Hysteresis TLINSD_HYS – 10 – °C Notes 39. Parameters guaranteed for 7.0V ≤ V SUP ≤ 18V. 40. When over-temperature shutdown occurs, the LIN bus goes in recessive state and the flag LINOT in LINSR is set. Table 3. Static Electrical Characteristics (continued) Characteristics noted under conditions 5.5V ≤ V SUP ≤ 18V, -40°C ≤ TA ≤ 125°C for the 33912 and -40°C ≤ TA ≤ 85°C for the 34912, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions, unless otherwise noted. Characteristic Symbol Min Typ Max Unit |
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