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STM32F101XC Datasheet(PDF) 53 Page - STMicroelectronics

Part # STM32F101XC
Description  High-density access line, ARM-based 32-bit MCU with 256 to 512 KB Flash, 9 timers, 1 ADC and 10 communication interfaces
PDF  106 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101XC Datasheet(HTML) 53 Page - STMicroelectronics

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STM32F101xC, STM32F101xD, STM32F101xE
Electrical characteristics
Doc ID 14610 Rev 7
53/106
Caution:
To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended
to use a resonator with a load capacitance CL 7 pF. Never use a resonator with a load
capacitance of 12.5 pF.
Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF,
then CL1 = CL2 = 8 pF.
Figure 20.
Typical application with a 32.768 kHz crystal
5.3.7
Internal clock source characteristics
The parameters given in Table 25 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 10.
High-speed internal (HSI) RC oscillator
ai14129b
OSC32_OU T
OSC32_IN
fLSE
CL1
RF
STM32F10xxx
32.768 KH z
resonator
Resonator with
integrated capacitors
Bias
controlled
gain
CL2
Table 25.
HSI oscillator characteristics(1)
1.
VDD = 3.3 V, TA = –40 to 85 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
1(3)
3.
Guaranteed by design, not tested in production.
%
Factory-
calibrated(4)
4.
Based on characterization, not tested in production.
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)
(4)
HSI oscillator startup
time
12
µs
IDD(HSI)
(4)
HSI oscillator power
consumption
80
100
µA



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